1 ELM34407AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-case steady-state rjc 25 c /w maximum junction-to-ambient steady-state rja 50 c /w parameter symbol limit unit note drain-source voltage vds -30 v gate-source voltage vgs 25 v continuous drain current ta=25c id -8 a ta=70c -7 pulsed drain current idm -30 a 3 power dissipation ta=25c pd 2.5 w ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM34407AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-30v ? id=-8a ? rds(on) < 32m (vgs=-10v) ? rds(on) < 55m (vgs=-4.5v) 4 - pin configuration circuit sop-8(top view) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 single p-channel mosfet s g d
2 ELM34407AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v -1 a vds=-20v,vgs= 0v, tj=125c -10 gate-body leakage current igss vds=0v, vgs= 25v 100 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -0.8 -1.5 -2.5 v on state drain current id(on) vgs=-10v, vds=-5v -30 a 1 static drain-source on-resistance rds(on) vgs=-10v, id=- 8a 26 32 m 1 vgs =- 4.5v, id =-6 a 44 55 m forward transconductance gfs vds =-1 0v, id =-6 a 7 s 1 diode forward voltage vsd is =- 1a, vgs=0v -1 v 1 max. body -diode continuous current is -3 a pulsed body -diode current ism -6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 920 pf output capacitance coss 190 pf reverse transfer capacitance crss 120 pf switching parameters total gate charge qg vgs=-10v, vds=-15v id=-6a 18.5 nc 2 gate-source charge qgs 2.7 nc 2 gate-drain charge qgd 4.5 nc 2 turn - on delay time td(on) vgs=-10v, vds=-10v id-1a, rgen=3 7.7 ns 2 turn - on rise time tr 5.7 ns 2 turn - off delay time td(off) 20.0 ns 2 turn - off fall time tf 9.5 ns 2 body diode reverse recovery charge qrr 7.9 nc ta=25 c single p-channel mosfet 4 - note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%.
3 typical electrical and thermal characteristics ELM34407AA-N single p-channel mosfet 4 - p-channel logic level enhancement mode field effect transistor p3203evg sop-8 lead-free niko-sem 3 nov-22-2005
4 ELM34407AA-N single p-channel mosfet 4 - p-channel logic level enhancement mode field effect transistor p3203evg sop-8 lead-free niko-sem 4 nov-22-2005
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